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Abstract Nonvolatile photonic integrated circuits employing phase change materials have relied either on optical switching mechanisms with precise multi-level control but poor scalability or electrical switching with seamless integration and scalability but mostly limited to a binary response. Recent works have demonstrated electrical multi-level switching; however, they relied on the stochastic nucleation process to achieve partial crystallization with low demonstrated repeatability and cyclability. Here, we re-engineer waveguide-integrated microheaters to achieve precise spatial control of the temperature profile (i.e., hotspot) and, thus, switch deterministic areas of an embedded phase change material cell. We experimentally demonstrate this concept using a variety of foundry-processed doped-silicon microheaters on a silicon-on-insulator platform to trigger multi-step amorphization and reversible switching of Sb₂Se₃and Ge₂Sb₂Se₄Te alloys. We further characterize the response of our microheaters using Transient Thermoreflectance Imaging. Our approach combines the deterministic control resulting from a spatially resolved glassy-crystalline distribution with the scalability of electro-thermal switching devices, thus paving the way to reliable multi-level switching towards robust reprogrammable phase-change photonic devices for analog processing and computing. 

Hyperbolic phonon polaritons (HPhPs) enable strong confinements, low losses, and intrinsic beam steering capabilities determined by the refractive index anisotropy—providing opportunities from hyperlensing to flat optics and other applications. Here, two scanning-probe techniques, photothermal induced resonance (PTIR) and scattering-type scanning near-field optical microscopy (s-SNOM), are used to map infrared (6.4–7.4 µm) HPhPs in large (up to 120 × 250 µm2) near-monoisotopic (>99% 10B) hexagonal boron nitride (hBN) flakes. Wide (≈40 µm) PTIR and s-SNOM scans on such large flakes avoid interference from polaritons launched from different asperities (edges, folds, surface defects, etc.) and together with Fourier analyses (0.05 µm−1 resolution) enable precise measurements of HPhP lifetimes (up to ≈4.2 ps) and propagation lengths (up to ≈25 and ≈17 µm for the first- and second-order branches, respectively). With respect to naturally abundant hBN, we report an eightfold improved, record-high (for hBN) propagating figure of merit (i.e., with both high confinement and long lifetime) in ≈99% 10B hBN, achieving, finally, theoretically predicted values. We show that wide near-field scans critically enable accurate estimates of the polaritons’ lifetimes and propagation lengths and that the incidence angle of light, with respect to both the sample plane and the flake edge, needs to be considered to extract correctly the dispersion relation from the near-field polaritons maps. Overall, the measurements and data analyses employed here elucidate details pertaining to polaritons’ propagation in isotopically enriched hBN and pave the way for developing high-performance HPhP-based devices.